3.10 For the following process steps, assume that you use a positive photoresist and that etch selectivity is infinite. A composite plot of four photomasks is given in Fig. 3-26. Assume that mask alignment is perfect. All contact sizes are 0.5 × 0.5 μm. The poly 1 and poly 2 areas are opaque, and the contact 1 and contact 2 areas are clear in the masks. Draw the cross section at the end of each process step along the cut line shown in the figure. λ=0.5μm Poly 1 mask Poly 2 mask Contact 1 mask Contact 2 mask FIGURE 3-26
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