Oxide Applications: Gate Oxide
{"Image DocumentName": "Oxide Applications: Gate Oxide", "Image ImageDescription": "Purpose: Serves as a dielectric between the gate and source-drain parts of MOS transistor. Gate oxide. Transistor site. p+ Silicon substrate. Source. Drain. Gate. Comments: Common gate oxide film thickness range from about 30 \u00c5 to 50 \u00c5. Dry oxidation is the preferred method.", "Image XResolution": "37", "Image YResolution": "37", "Image ResolutionUnit": "Pixels/Centimeter", "Image Software": "SlidePlayer", "Image YCbCrPositioning": "Centered"}