Steps for fabricating a mPSiS by using standard photolithography and ICP etching techniques (a–f).Si substrate after treated with a BOE (a), deposited SiO2 by PECVD (b) and coated a photoresist layer (c). Using standard photolithography to lithograph the mask (d), then etched the mask (SiO2) (e,g) and Si substrate (f ). Finally, Si substrate etched (mPSiS) with SiO2 has been removed (inset shows cross-sectional image) (h).
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