Example STI Process Remove photoresist Grow 500A Liner Oxide
{"Image DocumentName": "Example STI Process Remove photoresist Grow 500A Liner Oxide", "Image ImageDescription": "Repair damage to sidewalls. Deposit 7000A TEOS SiO2 by PECVD in Applied Materials P5000. CMP TEOS with Westech 372. Nitride is stopping layer since CMP slurry removes oxide 4x faster then nitride. 5.", "Image XResolution": "37", "Image YResolution": "37", "Image ResolutionUnit": "Pixels/Centimeter", "Image Software": "SlidePlayer", "Image YCbCrPositioning": "Centered"}