2011 Memory Transition Table
{"Image DocumentName": "2011 Memory Transition Table", "Image ImageDescription": "IN/OUT (Table ERD5) Reason for IN/OUT. Comment. Emerging Ferroelectric Memory. IN. Replaces former FeFET category and the ferroelectric polarization/ electronic effects memory categories. Ferroelectric polarization/ electronic effects memory has same difficult problems as FeFET, e.g. scalability, retention, endurance fatigue. Redox memory. Replaces former nanothermal and Ionic memory categories. Former \u2018Nanothermal\u2019 and \u2018Nanoinic\u2019 entries often referred to related mechanisms of resistive switching. Mott Memory. Separated from the electronic effects memory. FeFET Memory. OUT. Merged with FeFET and the ferroelectric polarization/electronc effects memory. Electronic effects memory. Replaced by EFM and Mott. Nanothermal memory. Merged with Ionic Memory to form Redox Memory Category. Nanoionic memory. Merged with Nanothermal Memory to form Redox Memory Category. Related mechanism to Nanothermal memory. Spin Torque Transfer MRAM. Became a prototypical technology. Spin Torque Tranfer MRAM is already included in PIDS chapter since 2009 (Tables PIDS5 and PIDS 5A)", "Image XResolution": "37", "Image YResolution": "37", "Image ResolutionUnit": "Pixels/Centimeter", "Image Software": "SlidePlayer", "Image YCbCrPositioning": "Centered"}