Back-Plane Ohmic Side Processing Technology
{"Image DocumentName": "Back-Plane Ohmic Side Processing Technology", "Image ImageDescription": "Single step implantation. Energy of the ion-beam: 80 KeV. Dose: 7E15 ions/cm2. Annealing: 30 min, 950 \u00baC in N2. Double step implantation. First Step: Energy of the ion-beam: 110 KeV. Dose: 1E15 ions/cm2. Annealing: 10 min, 1050 \u00baC in O2 + N2. Second Step: Energy of the ion-beam: 50 KeV. Dose: 1E16 ions/cm2. For very HV operation when the detector is biased 2-3 times the full depletion voltage, double step implementaion is very useful.", "Image XResolution": "37", "Image YResolution": "37", "Image ResolutionUnit": "Pixels/Centimeter", "Image Software": "SlidePlayer", "Image YCbCrPositioning": "Centered"}